?2005 fairchild semiconductor corporation 1 www.fairchildsemi.com FFPF20UP20DN rev. a FFPF20UP20DN 20 a, 200 v, ultrafast dual diode FFPF20UP20DN ? ultrafast recovery t rr = 45 ns (@ i f = 10 a) ? max forward voltage, v f = 1.15 v (@ t c = 25c) ? reverse voltage, v rrm = 200 v ? avalanche energy rated ? rohs compliant applications ? output rectifiers ? switching mode power supply ? free-wheeling diode for motor a pplication ? power switching circuits absolute maximum ratings (per diode) t a = 25c unless otherwise noted thermal characteristics t a = 25c unless otherwise noted symbol parameter value unit v rrm peak repetitive reverse voltage 200 v v rwm working peak reverse voltage 200 v v r dc blocking voltage 200 v i f(av) average rectified forward current @ t c = 115 c1 0 a i fsm non-repetitive peak surge current 60hz single half-sine wave 100 a t j, t stg operating junction and storage temperature - 65 to +150 c symbol parameter max unit r jc maximum thermal resistance, junction to case 4.3 c/w 1.anode 2.cathode 3.anode 1. anode 2. cathode 3. anode 1 2 3 1 to-220f features 20 a, 200 v, ultrafast dual diode the FFPF20UP20DN is an ultrafast dual diode with low forward v oltage drop and rugged uis capability. this device is intended for use as freewheeling and clamping diodes in a variety of switching power supplies and other power switc hing applications. it is s pecially s uited for us e in switching power s upplies and industrial applicationa as welder and ups application. tm october 2005
2 www.fairchildsemi.com FFPF20UP20DN 20 a, 200 v, ultrafast dual diode electrical characteristics (per diode) t a = 25c unless otherwise noted * pulse test: pulse width=300 s, duty cycle= 2% symbol parameter min. typ. max. unit v f * i f = 10 a i f = 10 a t c = 25 c t c = 150 c - - - - 1.15 1.0 v v i r * v r = 200 v v r = 200 v t c = 25 c t c = 150 c - - - - 100 500 a a t rr i f = 1 a, di/dt = 100 a/s, v cc = 30 v i f = 10 a, di/dt = 200 a/s, v cc = 130 v t c = 25 c t c = 25 c - - - - 35 45 ns ns t a t b q rr i f =10 a, di/dt = 200 a/s, v cc = 130 v t c = 25 c t c = 25 c t c = 25 c - - - 15 12 36 - - - ns ns nc w avl avalanche energy (l = 20mh) 10 - - mj ?2005 fairchild semiconductor corporation FFPF20UP20DN rev. a
3 www.fairchildsemi.com FFPF20UP20DN 20 a, 200 v, ultrafast dual diode typical performance characteristics figure 1. typical forward voltage dr op figure 2. typical reverse current figure 3. typical junction capacitance f igure 4. typical reverse recovery time figure 5. typical reverse recovery current figure 6. forward current deration curve 0.1 1 10 50 0.0 0.5 1.0 1.5 2.0 t c = 25 o c t c = 100 o c forward voltage , v f [v] forward current , i f [a] 0 50 100 150 200 0.001 0.01 0.1 1 10 100 t c = 25 o c t c = 100 o c reverse current , i r [ a] reverse voltage , v r [v] 0.1 1 10 100 10 100 400 f = 1 mhz capacitance , cj [pf] reverse voltage , v r [v] 100 200 300 400 500 20 30 40 50 60 t c =25 o c reverse recovery time , t rr [ns] di/dt [a/ s] t c =125 o c i f =10a 100 200 300 400 500 0 2 4 6 8 10 12 t c =25 o c i f = 10a reverse recovery current , i rr [a] di/dt [a/ s] t c =125 o c 100 110 120 130 140 150 0 2 4 6 8 10 12 14 average rectified forward current, i f(av) [a] case temperature, t c [ o c] dc ?2005 fairchild semiconductor corporation FFPF20UP20DN rev. a
package demensions dimensions in millimeters FFPF20UP20DN 20 a, 200 v, ultrafast dual diode (7.00) (0.70) max1.47 (30) #1 3.30 0.1 0 15.80 0.20 15.87 0.20 6.68 0.20 9.75 0.30 4.70 0.20 10.16 0.20 (1.00x45) 2.54 0.20 0.80 0.10 9.40 0.20 2.76 0.2 0 0.35 0.10 ?.18 0.10 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] 0.50 +0.10 ?.05 to-220f ?2005 fairchild semiconductor corporation FFPF20UP20DN rev. a 4 www.fairchildsemi.com
?2005 fairchild semiconductor corporation FFPF20UP20DN rev. a 5 www.fairchildsemi.com FFPF20UP20DN 20 a, 200 v, ultrafast dual diode
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